shengyuic
shengyuic
TPWR6003PL,L1Q
the part number is TPWR6003PL,L1Q
Part
TPWR6003PL,L1Q
Description
MOSFET N-CH 30V 150A 8DSOP
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $3.1164 $3.0541 $2.9606 $2.8671 $2.7424 Get Quotation!
Specification
RdsOn(Max)@Id 2.1V @ 1mA
Vgs(th)(Max)@Id ±20V
Vgs 110 nC @ 10 V
FETFeature 960mW (Ta), 170W (Tc)
DraintoSourceVoltage(Vdss) 30 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 4.5V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 8-DSOP Advance
InputCapacitance(Ciss)(Max)@Vds -
Series U-MOSIX-H
Qualification
SupplierDevicePackage 8-PowerWDFN
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 150A (Tc)
Vgs(Max) 10000 pF @ 15 V
MinRdsOn) 0.6mOhm @ 50A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) 175°C
Related Parts For TPWR6003PL,L1Q
TPWR001

Microchip Technology

KIT DEV FOR WIRELESS SENSORS

TPWR6003PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 150A 8DSOP

TPWR7904PB,L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 150A 8DSOP

TPWR8004PL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 40V 150A 8DSOP

TPWR8503NL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 150A 8DSOP

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!