1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $12.4805 | $12.2309 | $11.8565 | $11.4821 | $10.9828 | Get Quotation! |
RdsOn(Max)@Id | 5V @ 600µA |
---|---|
Vgs(th)(Max)@Id | +25V, -10V |
Vgs | 28 nC @ 18 V |
FETFeature | 111W (Tc) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 18V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-247-4L(X) |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-247-4 |
FETType | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Current-ContinuousDrain(Id)@25°C | 30A (Tc) |
Vgs(Max) | 873 pF @ 400 V |
MinRdsOn) | 118mOhm @ 15A, 18V |
Package | Tube |
PowerDissipation(Max) | 175°C |
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