| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $10.325 | $10.1185 | $9.8087 | $9.499 | $9.086 | Get Quotation! |
| RdsOn(Max)@Id | 5V @ 1.2mA |
|---|---|
| Vgs(th)(Max)@Id | +25V, -10V |
| Vgs | 21 nC @ 18 V |
| FETFeature | 76W (Tc) |
| DraintoSourceVoltage(Vdss) | 650 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 18V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-247-4L(X) |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-247-4 |
| FETType | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Current-ContinuousDrain(Id)@25°C | 20A (Tc) |
| Vgs(Max) | 600 pF @ 400 V |
| MinRdsOn) | 152mOhm @ 10A, 18V |
| Package | Tube |
| PowerDissipation(Max) | 175°C |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!