shengyuic
shengyuic
UES1002SM-1/TR
the part number is UES1002SM-1/TR
Part
UES1002SM-1/TR
Manufacturer
Description
DIODE GEN PURP 100V 2A A SQ-MELF
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $25.332 $24.8254 $24.0654 $23.3054 $22.2922 Get Quotation!
Specification
Current-ReverseLeakage@Vr 2 µA @ 100 V
Speed Fast Recovery =< 500ns, > 200mA (Io)
F Surface Mount
ProductStatus Active
Package/Case A, SQ-MELF
Grade -
Capacitance@Vr -
ReverseRecoveryTime(trr) 25 ns
MountingType SQ-MELF, A
Series -
Qualification
SupplierDevicePackage -55°C ~ 175°C
Voltage-Forward(Vf)(Max)@If 975 mV @ 1 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 100 V
OperatingTemperature-Junction -
Current-AverageRectified(Io) 2A
Package Tape & Reel (TR)
Related Parts For UES1002SM-1/TR
UES1001

Microchip Technology

DIODE GEN PURP 50V 1A A AXIAL

UES1001/TR

Microchip Technology

DIODE GEN PURP 50V 1A A AXIAL

UES1001SM

Microchip Technology

DIODE GEN PURP 1A A SQ-MELF

UES1001SM/TR

Microchip Technology

DIODE GEN PURP 1A A SQ-MELF

UES1002

Microchip Technology

DIODE GEN PURP 100V 1A AXIAL

UES1002/TR

Microchip Technology

DIODE GEN PURP 100V 1A

UES1002SM

Microchip Technology

DIODE GEN PURP A AXIAL

UES1002SM-1

Microchip Technology

DIODE GEN PURP 100V 2A A SQ-MELF

UES1002SM-1/TR

Microchip Technology

DIODE GEN PURP 100V 2A A SQ-MELF

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!