shengyuic
shengyuic
US1A-E3/61T
the part number is US1A-E3/61T
Part
US1A-E3/61T
Manufacturer
Description
DIODE GEN PURP 50V 1A DO214AC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.4998 $0.4898 $0.4748 $0.4598 $0.4398 Get Quotation!
Specification
RoHS Status: Digi-Reel®
Mounting Type: Surface Mount
Voltage - Breakdown: DO-214AC (SMA)
Voltage - Peak Reverse (Max): Standard
Voltage - Forward (Vf) (Max) @ If: 1A
Current - Reverse Leakage @ Vr: 1V @ 1A
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 27 Weeks
Manufacturer Part Number: US1A-E3/61T
Diode Configuration: 10µA @ 50V
Resistance @ If, F: 15pF @ 4V, 1MHz
Email: [email protected]
Operating Temperature - Junction: 50ns
Current - Average Rectified (Io) (per Diode): 50V
Capacitance @ Vr, F: -55°C ~ 150°C
Series: -
Other Names: US1A-E3/61TGIDKR
Description: DIODE GEN PURP 50V 1A DO214AC
Polarization: DO-214AC, SMA
Reverse Recovery Time (trr): Fast Recovery = 200mA (Io)
Expanded Description: Diode Standard 50V 1A Surface Mount DO-214AC (SMA)
Related Parts For US1A-E3/61T
US1A

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO214AC

US1A M2G

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO214AC

US1A R3G

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 1A DO214AC

US1A-13

Diodes Incorporated

ULTRAFAST SMA 50V 1A 50NS 150C

US1A-13-F

Diodes Inc.

DIODE GEN PURP 50V 1A SMA

US1A-13-F

Diodes Incorporated

DIODE GEN PURP 50V 1A SMA

US1A-E3/5AT

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 1A DO214AC

US1A-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO214AC

US1A-E3/61T

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 1A DO214AC

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!