| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 2.5V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | - |
| FETFeature | 350mW (Tc) |
| DraintoSourceVoltage(Vdss) | 60 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 5V, 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | TO-92 (TO-226) |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 200mA (Ta) |
| Vgs(Max) | 100 pF @ 15 V |
| MinRdsOn) | 1.2Ohm @ 1A, 10V |
| Package | Tape & Box (TB) |
| PowerDissipation(Max) | - |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!