1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $2.3256 | $2.2791 | $2.2093 | $2.1396 | $2.0465 | Get Quotation! |
RdsOn(Max)@Id | 3.5V @ 1mA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | - |
FETFeature | 740mW (Ta) |
DraintoSourceVoltage(Vdss) | 500 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 4.5V, 10V |
ProductStatus | Active |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-92-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | TO-226-3, TO-92-3 (TO-226AA) |
FETType | P-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 100mA (Tj) |
Vgs(Max) | 190 pF @ 25 V |
MinRdsOn) | 30Ohm @ 100mA, 10V |
Package | Bag |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!