shengyuic
shengyuic
VS-60APF10PBF
the part number is VS-60APF10PBF
Part
VS-60APF10PBF
Description
DIODE GEN PURP 1KV 60A TO247AC
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Current-ReverseLeakage@Vr 100 µA @ 1000 V
Speed Fast Recovery =< 500ns, > 200mA (Io)
F -
ProductStatus Obsolete
Package/Case Through Hole
Grade -40°C ~ 150°C
Capacitance@Vr -
ReverseRecoveryTime(trr) 480 ns
MountingType -
Series -
Qualification
SupplierDevicePackage TO-247-3
Voltage-Forward(Vf)(Max)@If 1.4 V @ 60 A
Technology Standard
Voltage-DCReverse(Vr)(Max) 1000 V
OperatingTemperature-Junction TO-247AC
Current-AverageRectified(Io) 60A
Package Tube
Related Parts For VS-60APF10PBF
VS-60APF02-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 60A TO247AC

VS-60APF02PBF

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 60A TO247AC

VS-60APF04-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 60A TO247AC

VS-60APF04PBF

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 60A TO247AC

VS-60APF06-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AC

VS-60APF06PBF

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 60A TO247AC

VS-60APF10-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 60A TO247AC

VS-60APF10PBF

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 60A TO247AC

VS-60APF12-M3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 60A TO247AC

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!