1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Current-ReverseLeakage@Vr | 515pF @ 1V, 1MHz |
---|---|
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
F | - |
ProductStatus | Obsolete |
Package/Case | TO-220-2 |
Grade | - |
Capacitance@Vr | - |
ReverseRecoveryTime(trr) | 65 µA @ 650 V |
MountingType | Through Hole |
Series | - |
Qualification | |
SupplierDevicePackage | TO-220AC |
Voltage-Forward(Vf)(Max)@If | 1.7 V @ 12 A |
Technology | SiC (Silicon Carbide) Schottky |
Voltage-DCReverse(Vr)(Max) | 650 V |
OperatingTemperature-Junction | -55°C ~ 175°C |
Current-AverageRectified(Io) | 12A |
Package | Tube |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!