shengyuic
shengyuic
VS-GA100TS60SF
the part number is VS-GA100TS60SF
Part
VS-GA100TS60SF
Description
IGBT MOD 600V 220A INT-A-PAK
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
Configuration Half Bridge
Voltage-CollectorEmitterBreakdown(Max) 600 V
OperatingTemperature INT-A-PAK
ProductStatus Obsolete
Package/Case 16.25 nF @ 30 V
NTCThermistor INT-A-Pak
MountingType 1.28V @ 15V, 100A
Current-CollectorCutoff(Max) No
Series -
Input Chassis Mount
SupplierDevicePackage
InputCapacitance(Cies)@Vce -40°C ~ 150°C (TJ)
Vce(on)(Max)@Vge 1 mA
Current-Collector(Ic)(Max) 220 A
Ic Standard
Package Bulk
Power-Max 780 W
IGBTType PT
Related Parts For VS-GA100TS60SF
VS-G1386TH

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP

VS-G1736UR

Vishay General Semiconductor - Diodes Division

DIODE

VS-GA100NA60UP

Vishay General Semiconductor - Diodes Division

IGBT MOD 600V 100A 250W SOT227

VS-GA100TS120UPBF

Vishay General Semiconductor - Diodes Division

IGBT MOD 1200V 182A INT-A-PAK

VS-GA100TS60SF

Vishay General Semiconductor - Diodes Division

IGBT MOD 600V 220A INT-A-PAK

VS-GA200HS60S1

Vishay General Semiconductor - Diodes Division

IGBT MOD 600V 480A INT-A-PAK

VS-GA200HS60S1PBF

Vishay General Semiconductor - Diodes Division

IGBT MOD 600V 480A INT-A-PAK

VS-GA200SA60SP

Vishay General Semiconductor - Diodes Division

IGBT MODULE 600V 781W SOT227

VS-GA200SA60UP

Vishay General Semiconductor - Diodes Division

IGBT MOD 600V 200A 500W SOT227

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!