| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 2V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | ±30V |
| Vgs | - |
| FETFeature | 830mW (Ta) |
| DraintoSourceVoltage(Vdss) | 60 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | TO-92-3 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | TrenchMOS™ |
| Qualification | |
| SupplierDevicePackage | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 300mA (Tc) |
| Vgs(Max) | 40 pF @ 10 V |
| MinRdsOn) | 5Ohm @ 500mA, 10V |
| Package | Tape & Box (TB) |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
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