| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.4141 | $0.4058 | $0.3934 | $0.381 | $0.3644 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 60V |
|---|---|
| Power Dissipation (Max): | 400mW (Ta) |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Mounting Type: | Through Hole |
| Packaging: | Cut Tape (CT) |
| Supplier Device Package: | TO-92-3 |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 6 Weeks |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | - |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
| Base Part Number: | 2N7000 |
| Other Names: | 2N7000-D26ZCT 2N7000_D26ZCT 2N7000_D26ZCT-ND |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!
