| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 8.7 nC @ 4.5 V |
|---|---|
| Vgs(th)(Max)@Id | - |
| Vgs | 1147 pF @ 10 V |
| FETFeature | Surface Mount |
| DraintoSourceVoltage(Vdss) | 20 V |
| OperatingTemperature | SOT-23-6 Thin, TSOT-23-6 |
| DriveVoltage(MaxRdsOn | 22mOhm @ 7.5A, 4.5V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | 2.5V, 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | -55°C ~ 150°C (TJ) |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | ±12V |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 7.5A (Ta) |
| Vgs(Max) | 2W (Ta) |
| MinRdsOn) | 1.2V @ 30µA |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | PG-TSOP6-6 |
INFINEON
Small Signal Field-Effect Transistor, 7.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!