| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 50mOhm @ 2.5A, 4.5V |
|---|---|
| Vgs(th)(Max)@Id | 3.2nC @ 4.5V |
| Vgs | 1.2V @ 11µA |
| Configuration | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate, 4.5V Drive |
| DraintoSourceVoltage(Vdss) | 20V |
| OperatingTemperature | Surface Mount |
| ProductStatus | Obsolete |
| Package/Case | PG-TSOP6-6 |
| GateCharge(Qg)(Max)@Vgs | 419pF @ 10V |
| Grade | AEC-Q101 |
| MountingType | SOT-23-6 Thin, TSOT-23-6 |
| InputCapacitance(Ciss)(Max)@Vds | 500mW |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | Automotive |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 2.5A |
| Package | Tape & Reel (TR) |
| Power-Max | -55°C ~ 150°C (TJ) |
INFINEON
Small Signal Field-Effect Transistor, 7.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!