1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Operating Temperature | 150u00b0C (TJ) |
---|---|
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V |
Current - Continuous Drain (Id) @ 25u00b0C | 190mA (Ta) |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 10Ohm @ 150mA, 5V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Supplier Device Package | TO-92-3 |
Drain to Source Voltage (Vdss) | 100 V |
Series | TrenchMOSu2122 |
Power Dissipation (Max) | 830mW (Ta) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Technology | MOSFET (Metal Oxide) |
Mfr | NXP USA Inc. |
Part Status | Obsolete |
Vgs (Max) | 20V |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Package | Bulk |
Base Product Number | BST7 |
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!