1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 3.5V @ 1mA |
---|---|
Vgs(th)(Max)@Id | 20V |
Vgs | - |
FETFeature | 830mW (Ta) |
DraintoSourceVoltage(Vdss) | 100 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 5V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-92-3 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | TrenchMOS™ |
Qualification | |
SupplierDevicePackage | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 190mA (Ta) |
Vgs(Max) | 40 pF @ 10 V |
MinRdsOn) | 10Ohm @ 150mA, 5V |
Package | Bulk |
PowerDissipation(Max) | 150°C (TJ) |
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