| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.52 | $0.5096 | $0.494 | $0.4784 | $0.4576 | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080 |
| Mount | Surface Mount |
| RoHS | Compliant |
| Drain to Source Voltage (Vdss) | -20 V |
| Drain to Source Resistance | 131 mΩ |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Number of Pins | 6 |
| Number of Elements | 1 |
| Input Capacitance | 228 pF |
| Width | 1.25 mm |
| Lead Free | Contains Lead |
| Rds On Max | 175 mΩ |
| Max Power Dissipation | 560 mW |
| On-State Resistance | 175 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Current Rating | -1.5 A |
| Max Dual Supply Voltage | -20 V |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 560 mW |
| Continuous Drain Current (ID) | 1.5 A |
| Rise Time | 8.5 ns |
| Length | 2 mm |
| Halogen Free | Halogen Free |
| Contact Plating | Tin |
| Packaging | Tape & Reel |
| Package Quantity | 3000 |
| Voltage Rating (DC) | -20 V |
| Case/Package | SOT-363 |
Infineon
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!