| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $56.3 | $55.174 | $53.485 | $51.796 | $49.544 | Get Quotation! |
| RdsOn(Max)@Id | 2.8V @ 10mA |
|---|---|
| Vgs(th)(Max)@Id | +25V, -10V |
| Vgs | 115 nC @ 20 V |
| FETFeature | 330W (Tc) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 20V |
| ProductStatus | Not For New Designs |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-247-3 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | Z-FET™ |
| Qualification | |
| SupplierDevicePackage | TO-247-3 |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Current-ContinuousDrain(Id)@25°C | 60A (Tc) |
| Vgs(Max) | 1893 pF @ 1000 V |
| MinRdsOn) | 52mOhm @ 40A, 20V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
WOLFSPEED
Power Mosfet, N Channel, 31.6 A, 1.2 Kv, 0.08 Ohm, 20 V, 3.2 V Rohs Compliant: Yes
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!