1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
RdsOn(Max)@Id | 4V @ 10mA |
---|---|
Vgs(th)(Max)@Id | +25V, -10V |
Vgs | 120 nC @ 20 V |
FETFeature | 277W (Tc) |
DraintoSourceVoltage(Vdss) | 1700 V |
OperatingTemperature | Through Hole |
DriveVoltage(MaxRdsOn | 20V |
ProductStatus | Obsolete |
Package/Case | - |
GateCharge(Qg)(Max)@Vgs | - |
Grade | |
MountingType | TO-247-4L |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | C2M™ |
Qualification | |
SupplierDevicePackage | TO-247-4 |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 40A (Tc) |
Vgs(Max) | 2250 pF @ 1000 V |
MinRdsOn) | 125mOhm @ 28A, 20V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
WOLFSPEED
Power Mosfet, N Channel, 31.6 A, 1.2 Kv, 0.08 Ohm, 20 V, 3.2 V Rohs Compliant: Yes
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