1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | $5.5524 | $5.4414 | $5.2748 | $5.1082 | $4.8861 | Get Quotation! |
Drain to Source Voltage (Vdss): | 650V |
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Power Dissipation (Max): | 46W (Tc) |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Packaging: | Tube |
Supplier Device Package: | TO-220F |
Vgs(th) (Max) @ Id: | 4.5V @ 4.4mA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Detailed Description: | N-Channel 650V 44A (Tc) 46W (Tc) Through Hole TO-220F |
FET Feature: | - |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Email: | [email protected] |
FET Type: | N-Channel |
Series: | SuperFET® III |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds: | 3090pF @ 400V |
Vgs (Max): | ±30V |
Rds On (Max) @ Id, Vgs: | 67 mOhm @ 22A, 10V |
Technology: | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
ON Semiconductor
FAIRCHILD SEMICONDUCTOR FCPF067N65S3 Power MOSFET, N Channel, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 VNew
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!