| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $5.0505 | $4.9495 | $4.798 | $4.6465 | $4.4444 | Get Quotation! |
| RdsOn(Max)@Id | 4.5V @ 3mA |
|---|---|
| Vgs(th)(Max)@Id | ±30V |
| Vgs | 57 nC @ 10 V |
| FETFeature | 43W (Tc) |
| DraintoSourceVoltage(Vdss) | 650 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Not For New Designs |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-220F |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | SuperFET® III |
| Qualification | |
| SupplierDevicePackage | TO-220-3 Full Pack |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 30A (Tc) |
| Vgs(Max) | 2310 pF @ 400 V |
| MinRdsOn) | 99mOhm @ 15A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
ON Semiconductor
FAIRCHILD SEMICONDUCTOR FCPF067N65S3 Power MOSFET, N Channel, 44 A, 650 V, 0.059 ohm, 10 V, 4.5 VNew
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!