| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.3488 | $0.3418 | $0.3314 | $0.3209 | $0.3069 | Get Quotation! |
| RdsOn(Max)@Id | 2V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 6 nC @ 5 V |
| FETFeature | 3.75W (Ta), 40W (Tc) |
| DraintoSourceVoltage(Vdss) | 100 V |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | 5V, 10V |
| ProductStatus | Obsolete |
| Package/Case | TO-262 (I2PAK) |
| GateCharge(Qg)(Max)@Vgs | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Grade | |
| MountingType | - |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | QFET® |
| Qualification | |
| SupplierDevicePackage | Through Hole |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 7.3A (Tc) |
| Vgs(Max) | 290 pF @ 25 V |
| MinRdsOn) | 350mOhm @ 3.65A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Fairchild Semiconductor
Compliant Through Hole 19 ns Lead Free 24 ns 350 mΩ TO-262-3 7.3 A
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!