| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $1.3348 | $1.3081 | $1.2681 | $1.228 | $1.1746 | Get Quotation! |
| RdsOn(Max)@Id | 5V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±30V |
| Vgs | 38 nC @ 10 V |
| FETFeature | 3.13W (Ta), 142W (Tc) |
| DraintoSourceVoltage(Vdss) | 600 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Active |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | I2PAK (TO-262) |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | QFET® |
| Qualification | |
| SupplierDevicePackage | TO-262-3 Long Leads, I2PAK, TO-262AA |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 7.4A (Tc) |
| Vgs(Max) | 1430 pF @ 25 V |
| MinRdsOn) | 1Ohm @ 3.7A, 10V |
| Package | Bulk |
| PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
Fairchild Semiconductor
Compliant Through Hole 19 ns Lead Free 24 ns 350 mΩ TO-262-3 7.3 A
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!