shengyuic
shengyuic
IPC60N04S406ATMA1
the part number is IPC60N04S406ATMA1
Part
IPC60N04S406ATMA1
Manufacturer
Description
MOSFET N-CH 40V 60A TDSON-8-23
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4V @ 30µA
Vgs(th)(Max)@Id ±20V
Vgs 33 nC @ 10 V
FETFeature 63W (Tc)
DraintoSourceVoltage(Vdss) 40 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case Automotive
GateCharge(Qg)(Max)@Vgs AEC-Q101
Grade
MountingType PG-TDSON-8-23
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage 8-PowerTDFN
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 60A (Tc)
Vgs(Max) 2650 pF @ 25 V
MinRdsOn) 6mOhm @ 30A, 10V
Package Tape & Reel (TR)
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IPC60N04S406ATMA1
IPC60N04S406ATMA1

Infineon Technologies

MOSFET N-CH 40V 60A TDSON-8-23

IPC60N04S4L06ATMA1

Infineon Technologies

MOSFET N-CH 40V 60A TDSON-8-23

IPC60R037P7X7SA1

Infineon Technologies

MOSFET N-CH HI POWER WAFER

IPC60R045CPX1SA4

Infineon Technologies

HIGH POWER_BEST IN CLASS

IPC60R070C6UNSAWNX6SA1

Infineon Technologies

MOSFET N-CH BARE DIE

IPC60R070CFD7X7SA1

Infineon Technologies

MOSFET N-CH HI POWER WAFER

IPC60R075CPX1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

IPC60R099C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

IPC60R099CPX1SA2

Infineon Technologies

MOSFET N-CH BARE DIE

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!