shengyuic
shengyuic
IPC60R070CFD7X7SA1
the part number is IPC60R070CFD7X7SA1
Part
IPC60R070CFD7X7SA1
Manufacturer
Description
MOSFET N-CH HI POWER WAFER
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id -
Vgs(th)(Max)@Id -
Vgs -
FETFeature -
DraintoSourceVoltage(Vdss) -
OperatingTemperature -
DriveVoltage(MaxRdsOn -
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType -
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage -
FETType -
Technology -
Current-ContinuousDrain(Id)@25°C -
Vgs(Max) -
MinRdsOn) -
Package Bulk
PowerDissipation(Max) -
Related Parts For IPC60R070CFD7X7SA1
IPC60N04S406ATMA1

Infineon Technologies

MOSFET N-CH 40V 60A TDSON-8-23

IPC60N04S4L06ATMA1

Infineon Technologies

MOSFET N-CH 40V 60A TDSON-8-23

IPC60R037P7X7SA1

Infineon Technologies

MOSFET N-CH HI POWER WAFER

IPC60R045CPX1SA4

Infineon Technologies

HIGH POWER_BEST IN CLASS

IPC60R070C6UNSAWNX6SA1

Infineon Technologies

MOSFET N-CH BARE DIE

IPC60R070CFD7X7SA1

Infineon Technologies

MOSFET N-CH HI POWER WAFER

IPC60R075CPX1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

IPC60R099C6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

IPC60R099CPX1SA2

Infineon Technologies

MOSFET N-CH BARE DIE

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!