shengyuic
shengyuic
IPD025N06NATMA1
the part number is IPD025N06NATMA1
Part
IPD025N06NATMA1
Manufacturer
Description
MOSFET N-CH 60V 90A TO252-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $2.4576 $2.4084 $2.3347 $2.261 $2.1627 Get Quotation!
Specification
RdsOn(Max)@Id 2.8V @ 95µA
Vgs(th)(Max)@Id ±20V
Vgs 71 nC @ 10 V
FETFeature 3W (Ta), 167W (Tc)
DraintoSourceVoltage(Vdss) 60 V
OperatingTemperature Surface Mount
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO252-3
InputCapacitance(Ciss)(Max)@Vds -
Series OptiMOS™
Qualification
SupplierDevicePackage TO-252-3, DPak (2 Leads + Tab), SC-63
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 90A (Tc)
Vgs(Max) 5200 pF @ 30 V
MinRdsOn) 2.5mOhm @ 90A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -55°C ~ 175°C (TJ)
Related Parts For IPD025N06NATMA1
IPD023N04NF2SATMA1

Infineon Technologies

TRENCH <= 40V

IPD025N06NATMA1

Infineon Technologies

MOSFET N-CH 60V 90A TO252-3

IPD028N06NF2SATMA1

Infineon Technologies

TRENCH 40<-<100V

IPD029N04NF2SATMA1

Infineon Technologies

TRENCH <= 40V

IPD031N03LGATMA1

Infineon Technologies

MOSFET N-CH 30V 90A TO252-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!