| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 1358 pF @ 15 V |
|---|---|
| Vgs(th)(Max)@Id | 52W (Tc) |
| Vgs | - |
| FETFeature | PG-TO252-3-23 |
| DraintoSourceVoltage(Vdss) | 25 V |
| OperatingTemperature | 4.5V, 10V |
| DriveVoltage(MaxRdsOn | 10.4mOhm @ 30A, 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | Surface Mount |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | 11 nC @ 5 V |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 30A (Tc) |
| Vgs(Max) | -55°C ~ 175°C (TJ) |
| MinRdsOn) | 2V @ 20µA |
| Package | Tape & Reel (TR) |
| PowerDissipation(Max) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
INFINEON
Power Field-Effect Transistor, 30A I(D), 25V, 0.0104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, TO-252, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!