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|---|---|---|---|---|---|---|
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| Drain to Source Voltage (Vdss): | 25V |
|---|---|
| Power Dissipation (Max): | 52W (Tc) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | P-TO252-3 |
| Vgs(th) (Max) @ Id: | 2V @ 20µA |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Detailed Description: | N-Channel 25V 30A (Tc) 52W (Tc) Surface Mount P-TO252-3 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | N-Channel |
| Series: | OptiMOS™ |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Other Names: | IPF10N03LAT SP000014985 |
| Input Capacitance (Ciss) (Max) @ Vds: | 1358pF @ 15V |
| Vgs (Max): | ±20V |
| Rds On (Max) @ Id, Vgs: | 10.4 mOhm @ 30A, 10V |
| Technology: | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 5V |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
INFINEON
Power Field-Effect Transistor, 30A I(D), 25V, 0.0104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, TO-252, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!