| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| RdsOn(Max)@Id | 4V @ 83µA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | 66 nC @ 10 V |
| FETFeature | 125W (Tc) |
| DraintoSourceVoltage(Vdss) | 100 V |
| OperatingTemperature | Through Hole |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Obsolete |
| Package/Case | |
| GateCharge(Qg)(Max)@Vgs | |
| Grade | |
| MountingType | PG-TO220-3-1 |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | OptiMOS™ |
| Qualification | |
| SupplierDevicePackage | TO-220-3 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 70A (Tc) |
| Vgs(Max) | 4355 pF @ 25 V |
| MinRdsOn) | 11.6mOhm @ 70A, 10V |
| Package | Tube |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
INFINEON
Power Field-Effect Transistor, 70A I(D), 40V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!