1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
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Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Min Operating Temperature | -55 °C |
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On-State Resistance | 16 mΩ |
Gate to Source Voltage (Vgs) | 20 V |
Schedule B | 8541290080 |
Mount | Through Hole |
Turn-On Delay Time | 70 ns |
RoHS | Compliant |
Max Dual Supply Voltage | 100 V |
Max Operating Temperature | 175 °C |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation | 250 W |
Continuous Drain Current (ID) | 70 A |
Rise Time | 250 ns |
Halogen Free | Halogen Free |
Lifecycle Status | NRND (Last Updated: 2 years ago) |
Package Quantity | 500 |
Number of Elements | 1 |
Input Capacitance | 4.54 nF |
Lead Free | Contains Lead |
Rds On Max | 16 mΩ |
Case/Package | TO-262-3 |
Max Power Dissipation | 250 W |
INFINEON
Power Field-Effect Transistor, 70A I(D), 40V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!