1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $0.306 | $0.2999 | $0.2907 | $0.2815 | $0.2693 | Get Quotation! |
RdsOn(Max)@Id | 3.5V @ 90µA |
---|---|
Vgs(th)(Max)@Id | ±20V |
Vgs | 9.4 nC @ 10 V |
FETFeature | 28.4W (Tc) |
DraintoSourceVoltage(Vdss) | 650 V |
OperatingTemperature | - |
DriveVoltage(MaxRdsOn | 10V |
ProductStatus | Active |
Package/Case | PG-TO-251-3-341 |
GateCharge(Qg)(Max)@Vgs | TO-251-3 Short Leads, IPak, TO-251AA |
Grade | |
MountingType | - |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | CoolMOS™ |
Qualification | |
SupplierDevicePackage | Through Hole |
FETType | N-Channel |
Technology | MOSFET (Metal Oxide) |
Current-ContinuousDrain(Id)@25°C | 3.2A (Tc) |
Vgs(Max) | 200 pF @ 100 V |
MinRdsOn) | 1.4Ohm @ 1.1A, 10V |
Package | Bulk |
PowerDissipation(Max) | -55°C ~ 150°C (TJ) |
INFINEON
Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!