| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.32 | $0.3136 | $0.304 | $0.2944 | $0.2816 | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | 650 V |
| On-State Resistance | 1.4 Ω |
| Gate to Source Voltage (Vgs) | 20 V |
| Mount | Through Hole |
| Fall Time | 20 ns |
| RoHS | Compliant |
| Max Dual Supply Voltage | 600 V |
| Max Operating Temperature | 150 °C |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation | 28.4 W |
| Drain to Source Resistance | 1.4 Ω |
| Continuous Drain Current (ID) | 3.2 A |
| Rise Time | 7 ns |
| Turn-Off Delay Time | 40 ns |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
| Package Quantity | 1500 |
| Number of Elements | 1 |
| Input Capacitance | 200 pF |
| Rds On Max | 1.4 Ω |
| Case/Package | TO-251 |
| Max Power Dissipation | 28.4 W |
INFINEON
Power Field-Effect Transistor, 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, IPAK-3
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!