shengyuic
shengyuic
IPU80R1K2P7AKMA1
the part number is IPU80R1K2P7AKMA1
Part
IPU80R1K2P7AKMA1
Manufacturer
Description
MOSFET N-CH 800V 4.5A TO251-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $0.986 $0.9663 $0.9367 $0.9071 $0.8677 Get Quotation!
Specification
RdsOn(Max)@Id 3.5V @ 80µA
Vgs(th)(Max)@Id ±20V
Vgs 11 nC @ 10 V
FETFeature 37W (Tc)
DraintoSourceVoltage(Vdss) 800 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO251-3
InputCapacitance(Ciss)(Max)@Vds -
Series CoolMOS™ P7
Qualification
SupplierDevicePackage TO-251-3 Short Leads, IPak, TO-251AA
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 4.5A (Tc)
Vgs(Max) 300 pF @ 500 V
MinRdsOn) 1.2Ohm @ 1.7A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For IPU80R1K2P7AKMA1
IPU80R1K0CEAKMA1

Infineon Technologies

MOSFET N-CH 800V 5.7A TO251-3

IPU80R1K0CEBKMA1

Infineon Technologies

MOSFET N-CH 800V 5.7A TO251-3

IPU80R1K2P7AKMA1

Infineon Technologies

MOSFET N-CH 800V 4.5A TO251-3

IPU80R1K4CEAKMA1

Infineon Technologies

MOSFET N-CH 800V 3.9A TO251-3

IPU80R1K4CEBKMA1

Infineon Technologies

MOSFET N-CH 800V 3.9A TO251-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!