shengyuic
shengyuic
IPU80R1K4CEBKMA1
the part number is IPU80R1K4CEBKMA1
Part
IPU80R1K4CEBKMA1
Manufacturer
Description
MOSFET N-CH 800V 3.9A TO251-3
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 63W (Tc)
Vgs(th)(Max)@Id Through Hole
Vgs -55°C ~ 150°C (TJ)
FETFeature 800 V
DraintoSourceVoltage(Vdss) 3.9A (Tc)
OperatingTemperature 23 nC @ 10 V
DriveVoltage(MaxRdsOn 3.9V @ 240µA
ProductStatus Discontinued at Digi-Key
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType ±20V
InputCapacitance(Ciss)(Max)@Vds TO-251-3 Short Leads, IPak, TO-251AA
Series CoolMOS™
Qualification
SupplierDevicePackage 570 pF @ 100 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 1.4Ohm @ 2.3A, 10V
Vgs(Max) PG-TO251-3
MinRdsOn) -
Package Tube
PowerDissipation(Max) 10V
Related Parts For IPU80R1K4CEBKMA1
IPU80R1K0CEAKMA1

Infineon Technologies

MOSFET N-CH 800V 5.7A TO251-3

IPU80R1K0CEBKMA1

Infineon Technologies

MOSFET N-CH 800V 5.7A TO251-3

IPU80R1K2P7AKMA1

Infineon Technologies

MOSFET N-CH 800V 4.5A TO251-3

IPU80R1K4CEAKMA1

Infineon Technologies

MOSFET N-CH 800V 3.9A TO251-3

IPU80R1K4CEBKMA1

Infineon Technologies

MOSFET N-CH 800V 3.9A TO251-3

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!