shengyuic
shengyuic
IPZ60R041P6FKSA1
the part number is IPZ60R041P6FKSA1
Part
IPZ60R041P6FKSA1
Manufacturer
Description
MOSFET N-CH 600V 77.5A TO247-4
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
Specification
RdsOn(Max)@Id 4.5V @ 2.96mA
Vgs(th)(Max)@Id ±20V
Vgs 170 nC @ 10 V
FETFeature 481W (Tc)
DraintoSourceVoltage(Vdss) 600 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 10V
ProductStatus Obsolete
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType PG-TO247-4
InputCapacitance(Ciss)(Max)@Vds -
Series CoolMOS™ P6
Qualification
SupplierDevicePackage TO-247-4
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 77.5A (Tc)
Vgs(Max) 8180 pF @ 100 V
MinRdsOn) 41mOhm @ 35.5A, 10V
Package Tube
PowerDissipation(Max) -55°C ~ 150°C (TJ)
Related Parts For IPZ60R041P6FKSA1
IPZ60R017C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 109A TO247-4

IPZ60R037P7XKSA1

Infineon Technologies

MOSFET N-CH 650V 76A TO247-4

IPZ60R040C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 50A TO247-4

IPZ60R041P6FKSA1

Infineon Technologies

MOSFET N-CH 600V 77.5A TO247-4

IPZ60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 35A TO247-4

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!