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NVBG040N120M3S
the part number is NVBG040N120M3S
Part
NVBG040N120M3S
Manufacturer
Description
SILICON CARBIDE (SIC) MOSFET-ELI
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $25.843 $25.3261 $24.5509 $23.7756 $22.7418 Get Quotation!
Specification
RdsOn(Max)@Id 4.4V @ 10mA
Vgs(th)(Max)@Id 1700 pF @ 800 V
Vgs 75 nC @ 18 V
FETFeature -55°C ~ 175°C (TJ)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature -
DriveVoltage(MaxRdsOn 18V
ProductStatus Active
Package/Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
GateCharge(Qg)(Max)@Vgs +22V, -10V
Grade
MountingType Surface Mount
InputCapacitance(Ciss)(Max)@Vds 263W (Tc)
Series Automotive, AEC-Q101
Qualification
SupplierDevicePackage D2PAK-7
FETType N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Current-ContinuousDrain(Id)@25°C 57A (Tc)
Vgs(Max) -
MinRdsOn) 54mOhm @ 20A, 18V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) -
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