| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $16.24 | $15.9152 | $15.428 | $14.9408 | $14.2912 | Get Quotation! |
| RdsOn(Max)@Id | 350A (Tc) |
|---|---|
| Vgs(th)(Max)@Id | 4.4V @ 160mA |
| Vgs | 5mOhm @ 200A, 18V |
| Configuration | Silicon Carbide (SiC) |
| FETFeature | 2 N-Channel (Half Bridge) |
| DraintoSourceVoltage(Vdss) | Standard |
| OperatingTemperature | -40°C ~ 175°C (TJ) |
| ProductStatus | - |
| Package/Case | 36-PIM (56.7x62.8) |
| GateCharge(Qg)(Max)@Vgs | 1195nC @ 20V |
| Grade | - |
| MountingType | Module |
| InputCapacitance(Ciss)(Max)@Vds | 20889pF @ 800V |
| Series | Tray |
| Qualification | - |
| SupplierDevicePackage | Chassis Mount |
| Technology | Active |
| Current-ContinuousDrain(Id)@25°C | 1200V |
| Package | 1 |
| Power-Max | 979W (Tc) |
onsemi
12.35 mm Production (Last Updated: 6 days ago) 950 W 2 54 ns 174 ns 175 °C -40 °C
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!