| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $245.256 | $240.3509 | $232.9932 | $225.6355 | $215.8253 | Get Quotation! |
| RdsOn(Max)@Id | 5.5mOhm @ 200A, 18V |
|---|---|
| Vgs(th)(Max)@Id | 876nC @ 20V |
| Vgs | 4.4V @ 120mA |
| Configuration | 2 N-Channel (Half Bridge) |
| FETFeature | Silicon Carbide (SiC) |
| DraintoSourceVoltage(Vdss) | 1200V |
| OperatingTemperature | - |
| ProductStatus | Active |
| Package/Case | Chassis Mount |
| GateCharge(Qg)(Max)@Vgs | 16410pF @ 800V |
| Grade | 36-PIM (56.7x62.8) |
| MountingType | - |
| InputCapacitance(Ciss)(Max)@Vds | 1.1kW (Tj) |
| Series | - |
| Qualification | |
| SupplierDevicePackage | Module |
| Technology | Silicon Carbide (SiC) |
| Current-ContinuousDrain(Id)@25°C | 338A (Tj) |
| Package | Tray |
| Power-Max | -40°C ~ 175°C (TJ) |
onsemi
12.35 mm Production (Last Updated: 6 days ago) 950 W 2 54 ns 174 ns 175 °C -40 °C
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!