| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.3838 | $0.3761 | $0.3646 | $0.3531 | $0.3377 | Get Quotation! |
| RdsOn(Max)@Id | 2V @ 1mA |
|---|---|
| Vgs(th)(Max)@Id | ±20V |
| Vgs | - |
| FETFeature | 830mW (Tc) |
| DraintoSourceVoltage(Vdss) | 60 V |
| OperatingTemperature | Surface Mount |
| DriveVoltage(MaxRdsOn | 4.5V, 10V |
| ProductStatus | Not For New Designs |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| MountingType | TO-236AB |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | TrenchMOS™ |
| Qualification | |
| SupplierDevicePackage | TO-236-3, SC-59, SOT-23-3 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 300mA (Ta) |
| Vgs(Max) | 40 pF @ 10 V |
| MinRdsOn) | 5Ohm @ 500mA, 10V |
| Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
| PowerDissipation(Max) | -65°C ~ 150°C (TJ) |
Nexperia
NEXPERIA - PMBF170,215 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!