| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.304 | $0.2979 | $0.2888 | $0.2797 | $0.2675 | Get Quotation! |
| Min Operating Temperature | -65 °C |
|---|---|
| Threshold Voltage | 2 V |
| Schedule B | 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|8541210080|85 |
| RoHS | Compliant |
| Radiation Hardening | No |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Resistance | 5 Ω |
| Element Configuration | Single |
| Manufacturer Lifecycle Status | RELEASED FOR SUPPLY (Last Updated: 1 day ago) |
| Lifecycle Status | Production (Last Updated: 1 day ago) |
| Number of Pins | 3 |
| Height | 1 mm |
| Number of Elements | 1 |
| Input Capacitance | 40 pF |
| Width | 1.4 mm |
| Lead Free | Lead Free |
| Rds On Max | 5 Ω |
| Max Power Dissipation | 830 mW |
| Drain to Source Breakdown Voltage | 60 V |
| Nominal Vgs | 2 V |
| Gate to Source Voltage (Vgs) | 20 V |
| REACH SVHC | No SVHC |
| Min Breakdown Voltage | 60 V |
| Max Dual Supply Voltage | 60 V |
| Resistance | 5 Ω |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 830 mW |
| Continuous Drain Current (ID) | 300 mA |
| Length | 3 mm |
| Contact Plating | Tin |
| Packaging | Tape & Reel |
| Case/Package | SOT |
Nexperia
NEXPERIA - PMBF170,215 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!