| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Voltage-Breakdown(V(BR)GSS) | 40 V |
|---|---|
| DraintoSourceVoltage(Vdss) | 40 V |
| OperatingTemperature | 150°C (TJ) |
| ProductStatus | Obsolete |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
| Grade | - |
| MountingType | Surface Mount |
| Resistance-RDS(On) | - |
| Voltage-Cutoff(VGSoff)@Id | 6pF @ 10V (VGS) |
| CurrentDrain(Id)-Max | 3 V @ 1 µA |
| InputCapacitance(Ciss)(Max)@Vds | 100 Ohms |
| Series | - |
| Qualification | - |
| SupplierDevicePackage | SOT-23 (TO-236AB) |
| FETType | N-Channel |
| Current-Drain(Idss)@Vds(Vgs=0) | 2 mA @ 15 V |
| Package | Tape & Reel (TR) |
| Power-Max | 300 mW |
Nexperia
NEXPERIA - PMBF170,215 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!