1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Voltage-Breakdown(V(BR)GSS) | 30 V |
---|---|
DraintoSourceVoltage(Vdss) | 30 V |
OperatingTemperature | - |
ProductStatus | Obsolete |
Package/Case | Surface Mount |
Grade | 5 V @ 10 nA |
MountingType | - |
Resistance-RDS(On) | SOT-23 (TO-236AB) |
Voltage-Cutoff(VGSoff)@Id | 85 Ohms |
CurrentDrain(Id)-Max | 8pF @ 10V (VGS) |
InputCapacitance(Ciss)(Max)@Vds | 300 mW |
Series | - |
Qualification | - |
SupplierDevicePackage | TO-236-3, SC-59, SOT-23-3 |
FETType | P-Channel |
Current-Drain(Idss)@Vds(Vgs=0) | 20 mA @ 15 V |
Package | Tape & Reel (TR),Cut Tape (CT),Digi-Reel® |
Power-Max | 150°C (TJ) |
Nexperia
NEXPERIA - PMBF170,215 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!