1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
Voltage-Breakdown(V(BR)GSS) | 25 V |
---|---|
DraintoSourceVoltage(Vdss) | 25 V |
OperatingTemperature | - |
ProductStatus | Obsolete |
Package/Case | Surface Mount |
Grade | 2 V @ 1 µA |
MountingType | - |
Resistance-RDS(On) | 6-TSSOP |
Voltage-Cutoff(VGSoff)@Id | 50 Ohms |
CurrentDrain(Id)-Max | 5pF @ 10V |
InputCapacitance(Ciss)(Max)@Vds | 190 mW |
Series | - |
Qualification | - |
SupplierDevicePackage | 6-TSSOP, SC-88, SOT-363 |
FETType | 2 N-Channel (Dual) |
Current-Drain(Idss)@Vds(Vgs=0) | 24 mA @ 10 V |
Package | Tape & Reel (TR) |
Power-Max | 150°C (TJ) |
Nexperia
NEXPERIA - PMBF170,215 - MOSFET Transistor, N Channel, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!