| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Gate to Source Voltage (Vgs) | 12 V |
|---|---|
| Mount | Surface Mount |
| Turn-On Delay Time | 9 ns |
| RoHS | Non-Compliant |
| Drain to Source Resistance | 1.5 Ω |
| Continuous Drain Current (ID) | 250 mA |
| Element Configuration | Single |
| Length | 2.9 mm |
| Turn-Off Delay Time | 35 ns |
| Voltage | 20 V |
| Number of Pins | 3 |
| Height | 850 µm |
| Input Capacitance | 50 pF |
| Width | 1.6 mm |
| Current | 25 A |
| Max Power Dissipation | 200 mW |
ROHM
Small Signal Field-Effect Transistor, 0.25A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!