| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.1638 | $0.1605 | $0.1556 | $0.1507 | $0.1441 | Get Quotation! |
| Drain to Source Voltage (Vdss): | 20V |
|---|---|
| Power Dissipation (Max): | 200mW (Ta) |
| Package / Case: | SC-70, SOT-323 |
| Mounting Type: | Surface Mount |
| Packaging: | Tape & Reel (TR) |
| Supplier Device Package: | UMT3 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Detailed Description: | P-Channel 20V 250mA (Ta) 200mW (Ta) Surface Mount UMT3 |
| FET Feature: | - |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Email: | [email protected] |
| FET Type: | P-Channel |
| Series: | - |
| Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
| Other Names: | RTU002P02T106TR |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
| Vgs (Max): | ±12V |
| Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 250mA, 4.5V |
| Technology: | MOSFET (Metal Oxide) |
| Operating Temperature: | 150°C (TJ) |
ROHM
Small Signal Field-Effect Transistor, 0.25A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3, 3 PIN
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!