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SCT10N120
the part number is SCT10N120
Part
SCT10N120
Manufacturer
Description
SICFET N-CH 1200V 12A HIP247
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
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Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $9.6921 $9.4983 $9.2075 $8.9167 $8.529 Get Quotation!
Specification
RdsOn(Max)@Id 3.5V @ 250µA
Vgs(th)(Max)@Id +25V, -10V
Vgs 22 nC @ 20 V
FETFeature 150W (Tc)
DraintoSourceVoltage(Vdss) 1200 V
OperatingTemperature Through Hole
DriveVoltage(MaxRdsOn 20V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType HiP247™
InputCapacitance(Ciss)(Max)@Vds -
Series -
Qualification
SupplierDevicePackage TO-247-3
FETType N-Channel
Technology SiCFET (Silicon Carbide)
Current-ContinuousDrain(Id)@25°C 12A (Tc)
Vgs(Max) 290 pF @ 400 V
MinRdsOn) 690mOhm @ 6A, 20V
Package Tube
PowerDissipation(Max) -55°C ~ 200°C (TJ)
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