1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
---|---|---|---|---|---|---|
Uni Price | $13.008 | $12.7478 | $12.3576 | $11.9674 | $11.447 | Get Quotation! |
RdsOn(Max)@Id | 3.5V @ 250µA |
---|---|
Vgs(th)(Max)@Id | +25V, -10V |
Vgs | 22 nC @ 20 V |
FETFeature | 150W (Tc) |
DraintoSourceVoltage(Vdss) | 1200 V |
OperatingTemperature | Automotive |
DriveVoltage(MaxRdsOn | 20V |
ProductStatus | Active |
Package/Case | HiP247™ |
GateCharge(Qg)(Max)@Vgs | TO-247-3 |
Grade | |
MountingType | AEC-Q101 |
InputCapacitance(Ciss)(Max)@Vds | - |
Series | - |
Qualification | |
SupplierDevicePackage | Through Hole |
FETType | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Current-ContinuousDrain(Id)@25°C | 12A (Tc) |
Vgs(Max) | 290 pF @ 400 V |
MinRdsOn) | 690mOhm @ 6A, 20V |
Package | Tube |
PowerDissipation(Max) | -55°C ~ 200°C (TJ) |
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