| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | $0.324 | $0.3175 | $0.3078 | $0.2981 | $0.2851 | Get Quotation! |
| RdsOn(Max)@Id | 4V @ 250µA |
|---|---|
| Vgs(th)(Max)@Id | ±30V |
| Vgs | 20 nC @ 10 V |
| FETFeature | 3.8W (Ta), 49W (Tc) |
| DraintoSourceVoltage(Vdss) | 100 V |
| OperatingTemperature | - |
| DriveVoltage(MaxRdsOn | 10V |
| ProductStatus | Active |
| Package/Case | TO-252 (DPAK) |
| GateCharge(Qg)(Max)@Vgs | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Grade | |
| MountingType | - |
| InputCapacitance(Ciss)(Max)@Vds | - |
| Series | - |
| Qualification | |
| SupplierDevicePackage | Surface Mount |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Current-ContinuousDrain(Id)@25°C | 6A (Tc) |
| Vgs(Max) | 550 pF @ 25 V |
| MinRdsOn) | 600mOhm @ 3A, 10V |
| Package | Bulk |
| PowerDissipation(Max) | -55°C ~ 175°C (TJ) |
Fairchild Semiconductor
Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!