| 1+ | 10+ | 100+ | 1000+ | 10000+ | Custom | |
|---|---|---|---|---|---|---|
| Uni Price | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! | Get Quotation! |
| Min Operating Temperature | -55 °C |
|---|---|
| Drain to Source Breakdown Voltage | -200 V |
| Gate to Source Voltage (Vgs) | 30 V |
| Fall Time | 12 ns |
| RoHS | Compliant |
| Resistance | 3 Ω |
| Max Operating Temperature | 150 °C |
| Power Dissipation | 3.1 W |
| Drain to Source Resistance | 3 Ω |
| Continuous Drain Current (ID) | -1.75 A |
| Element Configuration | Single |
| Rise Time | 20 ns |
| Turn-Off Delay Time | 27 ns |
| Case/Package | TO-263 |
Fairchild Semiconductor
Power Field-Effect Transistor, 1.75A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!