shengyuic
shengyuic
SI4100DY-T1-GE3
the part number is SI4100DY-T1-GE3
Part
SI4100DY-T1-GE3
Manufacturer
Description
MOSFET N-CH 100V 6.8A 8SO
Lead Free/ROHS
pb RoHs
Datasheets
CAD Models
Request Quotation
Multiple quotation,please Click Here!
Target Price x Quantity = $0.00
Part
Company
Name
Email *
Phone *
Country *
Pricing
1+ 10+ 100+ 1000+ 10000+ Custom
Uni Price $1.2446 $1.2197 $1.1824 $1.145 $1.0952 Get Quotation!
Specification
RdsOn(Max)@Id 4.5V @ 250µA
Vgs(th)(Max)@Id 600 pF @ 50 V
Vgs ±20V
FETFeature -55°C ~ 150°C (TJ)
DraintoSourceVoltage(Vdss) 100 V
OperatingTemperature 8-SOIC
DriveVoltage(MaxRdsOn 6V, 10V
ProductStatus Active
Package/Case -
GateCharge(Qg)(Max)@Vgs -
Grade
MountingType 8-SOIC (0.154, 3.90mm Width)
InputCapacitance(Ciss)(Max)@Vds 2.5W (Ta), 6W (Tc)
Series TrenchFET®
Qualification
SupplierDevicePackage 20 nC @ 10 V
FETType N-Channel
Technology MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C 6.8A (Tc)
Vgs(Max) -
MinRdsOn) 63mOhm @ 4.4A, 10V
Package Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
PowerDissipation(Max) Surface Mount
Related Parts For SI4100DY-T1-GE3
SI4100DY-T1-E3

Vishay

MOSFET N-CH 100V 6.8A 8-SOIC

SI4100DY-T1-E3

Vishay Siliconix

MOSFET N-CH 100V 6.8A 8SO

SI4100DY-T1-GE3

Vishay

MOSFET N-CH 100V 6.8A 8-SOIC

SI4100DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 6.8A 8SO

SI4101DY-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 25.7A 8SO

Room 305A, ShangHang Building, NO.23 Building , ShangBu Industrial Zone, Hongli Road, Futian, Shenzhen China, 518028! Contact Us Now!